STP110N8F7
MOSFET N-CH 80V 80A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The STMicroelectronics STP110N8F7 is an N-Channel STripFET™ MOSFET designed for demanding power applications. This component features a 80V drain-source breakdown voltage (Vds) and a continuous drain current (Id) of 80A at 25°C (Tc). The low on-resistance of 7.5mOhm at 40A and 10V gate drive voltage (Vgs) ensures efficient power transfer. With a maximum power dissipation of 170W (Tc) and a junction temperature range of -55°C to 175°C, it is suitable for high-power switching circuits. Key parameters include a gate charge (Qg) of 46.8 nC at 10V Vgs and input capacitance (Ciss) of 3435 pF at 40V Vds. The device is packaged in a TO-220-3 through-hole configuration. This MOSFET is commonly utilized in industrial, automotive, and power supply applications where robust performance is critical.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 170W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 46.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3435 pF @ 40 V |
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