STP110N8F6
MOSFET N-CH 80V 110A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STP110N8F6 is an N-Channel STripFET™ F6 power MOSFET designed for high-current applications. This component features a Drain-Source Voltage (Vdss) of 80V and a continuous Drain Current (Id) of 110A at 25°C (Tc). With a maximum On-Resistance (Rds On) of 6.5mOhm at 55A and 10V drive, it offers efficient power handling. The STP110N8F6 dissipates up to 200W (Tc) and is housed in a standard TO-220-3 through-hole package, suitable for mounting in demanding thermal environments. Key electrical characteristics include a Gate Charge (Qg) of 150 nC at 10V and an input capacitance (Ciss) of 9130 pF at 40V. This MOSFET operates across a temperature range of -55°C to 175°C (TJ). Its robust design makes it suitable for use in power supply, automotive, and industrial motor control applications.
Additional Information
Series: STripFET™ F6RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 55A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9130 pF @ 40 V |
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