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STP110N8F6

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STP110N8F6

MOSFET N-CH 80V 110A TO220

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The STMicroelectronics STP110N8F6 is an N-Channel STripFET™ F6 power MOSFET designed for high-current applications. This component features a Drain-Source Voltage (Vdss) of 80V and a continuous Drain Current (Id) of 110A at 25°C (Tc). With a maximum On-Resistance (Rds On) of 6.5mOhm at 55A and 10V drive, it offers efficient power handling. The STP110N8F6 dissipates up to 200W (Tc) and is housed in a standard TO-220-3 through-hole package, suitable for mounting in demanding thermal environments. Key electrical characteristics include a Gate Charge (Qg) of 150 nC at 10V and an input capacitance (Ciss) of 9130 pF at 40V. This MOSFET operates across a temperature range of -55°C to 175°C (TJ). Its robust design makes it suitable for use in power supply, automotive, and industrial motor control applications.

Additional Information

Series: STripFET™ F6RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C110A (Tc)
Rds On (Max) @ Id, Vgs6.5mOhm @ 55A, 10V
FET Feature-
Power Dissipation (Max)200W (Tc)
Vgs(th) (Max) @ Id4.5V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)80 V
Gate Charge (Qg) (Max) @ Vgs150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds9130 pF @ 40 V

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