STP110N7F6
MOSFET N-CHANNEL 68V 110A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP110N7F6 is an N-Channel STripFET™ F6 series Power MOSFET designed for high-current applications. This component features a Drain to Source Voltage (Vdss) of 68 V and a continuous Drain Current (Id) of 110 A at 25°C (Tc). The low on-resistance, specified as a maximum of 6.5 mOhm at 55 A and 10 V, minimizes conduction losses. With a maximum power dissipation of 176 W (Tc) and an operating temperature range of -55°C to 175°C (TJ), it is suitable for demanding environments. The device utilizes a TO-220-3 through-hole package, facilitating robust mounting. Key electrical parameters include a Gate Charge (Qg) of 100 nC at 10 V and Input Capacitance (Ciss) of 5850 pF at 25 V. This MOSFET is commonly employed in power supply units, automotive applications, and industrial motor control systems.
Additional Information
Series: STripFET™ F6RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 55A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 176W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 68 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5850 pF @ 25 V |
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