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STP110N7F6

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STP110N7F6

MOSFET N-CHANNEL 68V 110A TO220

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STP110N7F6 is an N-Channel STripFET™ F6 series Power MOSFET designed for high-current applications. This component features a Drain to Source Voltage (Vdss) of 68 V and a continuous Drain Current (Id) of 110 A at 25°C (Tc). The low on-resistance, specified as a maximum of 6.5 mOhm at 55 A and 10 V, minimizes conduction losses. With a maximum power dissipation of 176 W (Tc) and an operating temperature range of -55°C to 175°C (TJ), it is suitable for demanding environments. The device utilizes a TO-220-3 through-hole package, facilitating robust mounting. Key electrical parameters include a Gate Charge (Qg) of 100 nC at 10 V and Input Capacitance (Ciss) of 5850 pF at 25 V. This MOSFET is commonly employed in power supply units, automotive applications, and industrial motor control systems.

Additional Information

Series: STripFET™ F6RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C110A (Tc)
Rds On (Max) @ Id, Vgs6.5mOhm @ 55A, 10V
FET Feature-
Power Dissipation (Max)176W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)68 V
Gate Charge (Qg) (Max) @ Vgs100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5850 pF @ 25 V

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