STP110N55F6
MOSFET N-CH 55V 110A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP110N55F6 is a high-performance N-channel Power MOSFET from the STripFET™ VI DeepGATE™ series. This device features a 55V drain-source breakdown voltage and a continuous drain current capability of 110A at 25°C (Tc). With a low on-resistance of 5.2mOhm at 60A and 10V Vgs, it offers excellent conduction efficiency. The STP110N55F6 is housed in a standard TO-220-3 through-hole package, facilitating easy integration into various PCB designs. Its robust thermal characteristics include a maximum power dissipation of 150W (Tc) and an operating temperature range of -55°C to 175°C. This component is widely utilized in power supply units, motor control applications, and automotive systems where high current handling and efficiency are critical. Key electrical parameters include a gate charge (Qg) of 120 nC at 10V and input capacitance (Ciss) of 8350 pF at 25V.
Additional Information
Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.2mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8350 pF @ 25 V |
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