STP110N10F7
MOSFET N CH 100V 110A TO-220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STP110N10F7 is a high-performance N-Channel Power MOSFET from the DeepGATE™, STripFET™ VII series. This device features a Vds of 100 V and a continuous drain current capability of 110A at 25°C (Tc), with a maximum power dissipation of 150W (Tc). The low on-resistance is specified at 7 mOhm at 55A and 10V (Vgs). Key parameters include a gate charge (Qg) of 60 nC (max) at 10V and input capacitance (Ciss) of 5500 pF (max) at 50V. Designed for through-hole mounting in a standard TO-220 package, the STP110N10F7 operates across a wide temperature range of -55°C to 175°C (TJ). This component is suitable for applications in power switching, motor control, and power distribution systems.
Additional Information
Series: DeepGATE™, STripFET™ VIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 55A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5500 pF @ 50 V |
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