STP10P6F6
MOSFET P-CH 60V 10A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STP10P6F6 is a P-channel STripFET™ VI Power MOSFET with a DeepGATE™ technology. This device features a 60V drain-to-source breakdown voltage and a continuous drain current capability of 10A at 25°C (Tc). The Rds(On) is specified at a maximum of 160mOhm when driven at 10V with a drain current of 5A. With a maximum power dissipation of 30W (Tc), this MOSFET is suitable for demanding applications. Key parameters include a gate charge (Qg) of 6.4 nC at 10V and an input capacitance (Ciss) of 340 pF at 48V. The STP10P6F6 operates at junction temperatures up to 175°C and is housed in a standard TO-220 package for through-hole mounting. This component finds application in power management systems and general-purpose switching across various industrial sectors.
Additional Information
Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 340 pF @ 48 V |
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