STP10NM65N
MOSFET N-CH 650V 9A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP10NM65N is an N-channel Power MOSFET from the MDmesh™ II series. This device features a 650 V drain-source voltage (Vdss) and a continuous drain current (Id) of 9 A at 25°C. The Rds(on) is specified at a maximum of 480 mOhm at 4.5 A and 10 V gate-source voltage. With a maximum power dissipation of 90 W (Tc), this component is housed in a TO-220AB package suitable for through-hole mounting. Key parameters include a gate charge (Qg) of 25 nC and input capacitance (Ciss) of 850 pF. This MOSFET is frequently utilized in power supply applications, motor control, and lighting solutions where high voltage and efficient switching are critical. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 480mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 850 pF @ 50 V |
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