STP10NM60ND
MOSFET N-CH 600V 8A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP10NM60ND is an N-Channel Power MOSFET from the FDmesh™ II series. This device features a Drain-Source Voltage (Vdss) of 600 V and a continuous Drain Current (Id) of 8 A at 25°C (Tc). The Rds On is specified at a maximum of 600 mOhm at 4 A and 10 V. With a maximum power dissipation of 70 W (Tc), it is housed in a standard TO-220 package for through-hole mounting. Key parameters include a Gate Charge (Qg) of 20 nC at 10 V and an input capacitance (Ciss) of 577 pF at 50 V. The operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in power supply, lighting, and industrial motor control.
Additional Information
Series: FDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 577 pF @ 50 V |