STP10NM50N
MOSFET N-CH 500V 7A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP10NM50N is an N-Channel Power MOSFET from the MDmesh™ II series. This component features a Drain-Source Voltage (Vdss) of 500 V and a continuous drain current (Id) of 7A at 25°C (Tc). The device offers a maximum On-Resistance (Rds On) of 630mOhm at 3.5A and 10V gate drive. With a maximum power dissipation of 70W (Tc), it is suitable for high-voltage switching applications. The STP10NM50N is housed in a standard TO-220-3 package, facilitating through-hole mounting. Key parameters include a 10V drive voltage, 17 nC gate charge at 10V, and 450 pF input capacitance at 50V. This MOSFET technology is utilized in power factor correction, switched-mode power supplies, and lighting applications.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 630mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 450 pF @ 50 V |