Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

STP10NK70Z

Banner
productimage

STP10NK70Z

MOSFET N-CH 700V 8.6A TO220AB

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics SuperMESH™ N-Channel Power MOSFET, part number STP10NK70Z, offers a 700V drain-source voltage (Vdss) and a continuous drain current (Id) of 8.6A at 25°C (Tc). This device features a maximum power dissipation of 150W (Tc) and is housed in a TO-220AB package. Key electrical characteristics include a typical input capacitance (Ciss) of 2000pF at 25V and a gate charge (Qg) of 90nC at 10V. The on-resistance (Rds On) is specified at a maximum of 850mOhm at 4.5A and 10V. This component is suitable for applications requiring high voltage switching, commonly found in power factor correction, switch-mode power supplies, and industrial motor control. Operating temperature range is from -55°C to 150°C (TJ).

Additional Information

Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C8.6A (Tc)
Rds On (Max) @ Id, Vgs850mOhm @ 4.5A, 10V
FET Feature-
Power Dissipation (Max)150W (Tc)
Vgs(th) (Max) @ Id4.5V @ 100µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)700 V
Gate Charge (Qg) (Max) @ Vgs90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2000 pF @ 25 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
STN1NK60Z

MOSFET N-CH 600V 300MA SOT223

product image
STD3NK80ZT4

MOSFET N-CH 800V 2.5A DPAK

product image
STF3NK80Z

MOSFET N-CH 800V 2.5A TO220FP