STP10NK50Z
MOSFET N-CH 500V 9A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP10NK50Z is a SuperMESH™ N-Channel Power MOSFET designed for high-voltage applications. This component features a 500V drain-source voltage (Vdss) and a continuous drain current (Id) of 9A at 25°C (Tc). With a maximum power dissipation of 125W (Tc), it offers robust performance for demanding power management tasks. The device exhibits a low on-resistance (Rds On) of 700mOhm at 4.5A and 10V gate-source voltage, alongside a gate charge (Qg) of 39.2 nC at 10V. The STP10NK50Z is housed in a standard TO-220AB package, suitable for through-hole mounting. Typical applications include power factor correction, switch mode power supplies, and motor control systems. Its operational temperature range is -55°C to 150°C (TJ).
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 39.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1219 pF @ 25 V |
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