STP10N65K3
MOSFET N-CH 650V 10A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP10N65K3 is a 650V N-channel Power MOSFET designed for high-efficiency power switching applications. This component offers a continuous drain current of 10A (Tc) and a maximum power dissipation of 150W (Tc). Key electrical parameters include a maximum Rds(on) of 1 Ohm at 3.6A and 10V Vgs, an input capacitance (Ciss) of 1180 pF at 25V, and a gate charge (Qg) of 42 nC at 10V. The STP10N65K3 features a TO-220 package for through-hole mounting and operates within a temperature range of -55°C to 150°C. This device is suitable for use in power supplies, industrial motor control, and lighting applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 3.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1180 pF @ 25 V |