STP10N62K3
MOSFET N-CH 620V 8.4A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP10N62K3 is a SuperMESH3™ N-channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source voltage (Vdss) of 620V and a continuous drain current (Id) of 8.4A at 25°C (Tc), with a maximum power dissipation of 125W (Tc). The device exhibits a typical Rds On of 750mOhm at 4A and 10V gate drive. Key characteristics include a gate charge (Qg) of 42 nC at 10V and an input capacitance (Ciss) of 1250 pF at 50V. The STP10N62K3 is housed in a standard TO-220-3 through-hole package, suitable for demanding power conversion tasks in industries such as industrial power supplies and renewable energy systems. Operating temperature range is from -55°C to 150°C (TJ).
Additional Information
Series: SuperMESH3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 620 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1250 pF @ 50 V |