STP100N8F6
MOSFET N-CH 80V 100A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STP100N8F6 is an N-Channel STripFET™ F6 Power MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 80V and a continuous drain current (Id) of 100A at 25°C (Tc), with a maximum power dissipation of 176W (Tc). The low on-resistance (Rds On) of 9mOhm at 50A and 10V gate drive voltage minimizes conduction losses. Key parameters include a gate charge (Qg) of 100 nC at 10V and input capacitance (Ciss) of 5955 pF at 25V. Operating across a wide temperature range of -55°C to 175°C (TJ), this TO-220 package component is suitable for power supplies, automotive applications, and industrial motor control.
Additional Information
Series: STripFET™ F6RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 176W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5955 pF @ 25 V |