STP100N6F7
MOSFET N-CH 60V 100A TO220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STP100N6F7 is a 60V N-Channel Power MOSFET from the STripFET™ F7 series. This component features a low Rds(on) of 5.6mOhm at 50A and 10V Vgs, enabling high efficiency in power conversion applications. With a continuous drain current rating of 100A (Tc) and maximum power dissipation of 125W (Tc), it is suitable for demanding power management tasks. Key parameters include a gate charge of 30 nC at 10V, input capacitance of 1980 pF at 25V, and a threshold voltage of 4V at 250µA. The device operates across a temperature range of -55°C to 175°C (TJ) and is housed in a TO-220-3 package for through-hole mounting. This MOSFET is widely utilized in automotive, industrial, and consumer electronics for applications such as power supplies, motor control, and battery management systems.
Additional Information
Series: STripFET™ F7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.6mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1980 pF @ 25 V |
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