STP100N10F7
MOSFET N CH 100V 80A TO-220Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STP100N10F7 is an N-Channel Power MOSFET from the DeepGATE™, STripFET™ VII series. This component offers a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 80A at 25°C with a thermal resistance junction-to-case (Tc) of 0.67°C/W, enabling a maximum power dissipation of 150W (Tc). Featuring a low on-resistance (Rds On) of 8mOhm at 40A and 10V, this device is suitable for high-current applications. The STP100N10F7 has a gate charge (Qg) of 61 nC at 10V and an input capacitance (Ciss) of 4369 pF at 50V. It is packaged in a TO-220-3 through-hole configuration and operates across a temperature range of -55°C to 175°C. This MOSFET finds application in power switching, motor control, and power supply designs.
Additional Information
Series: DeepGATE™, STripFET™ VIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4369 pF @ 50 V |
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