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STN5PF02V

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STN5PF02V

MOSFET P-CH 20V 4.2A SOT223

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The STMicroelectronics STN5PF02V is a P-Channel STripFET™ II Power MOSFET designed for efficient power management applications. This device features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 4.2A at 25°C. With a maximum power dissipation of 2.5W (Tc), it is suitable for compact designs. The Rds On is specified at a maximum of 80mOhm at 2.1A and 4.5V gate-source voltage (Vgs). Key characteristics include a gate charge (Qg) of 6 nC at 2.5V and an input capacitance (Ciss) of 412 pF at 15V. The STN5PF02V is housed in a SOT-223 (TO-261-4, TO-261AA) surface-mount package, compatible with tape and reel (TR) packaging. Operating temperature range is -55°C to 150°C (TJ). This component finds application in automotive and industrial power control systems.

Additional Information

Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C4.2A (Tc)
Rds On (Max) @ Id, Vgs80mOhm @ 2.1A, 4.5V
FET Feature-
Power Dissipation (Max)2.5W (Tc)
Vgs(th) (Max) @ Id450mV @ 250µA (Min)
Supplier Device PackageSOT-223
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs6 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds412 pF @ 15 V

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