STN3PF06
MOSFET P-CH 60V 2.5A SOT223Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STN3PF06 is a P-Channel STripFET™ II Power MOSFET designed for surface mount applications. This device features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 2.5A at 25°C, with a maximum power dissipation of 2.5W (Tc). The ON-resistance (Rds On) is specified at a maximum of 220mOhm at 1.5A and 10V gate drive. Key parameters include a gate charge (Qg) of 21nC (max) at 10V and input capacitance (Ciss) of 850pF (max) at 25V. The STN3PF06 operates within a temperature range of -65°C to 150°C and is supplied in a SOT-223 package, available on tape and reel. This component is suitable for use in various electronic power management applications.
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 850 pF @ 25 V |
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