STN2NE10L
MOSFET N-CH 100V 1.8A SOT-223Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STN2NE10L is an N-Channel STripFET™ Power MOSFET designed for high-efficiency power switching applications. This device features a 100V drain-source breakdown voltage and a continuous drain current capability of 1.8A at 25°C. The low on-resistance of 400mOhm at 1A, 10V Vgs, coupled with a maximum power dissipation of 2.5W (Tc), makes it suitable for power management in consumer electronics and industrial automation. Key parameters include a gate charge of 14nC (max) at 5V Vgs and input capacitance of 345pF (max) at 25V Vds. The STN2NE10L is housed in a compact SOT-223 (TO-261-4) surface-mount package, supplied on tape and reel. It offers a wide operating temperature range up to 150°C (TJ) and supports gate-source voltages up to ±20V.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 345 pF @ 25 V |
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