STN2NE10
MOSFET N-CH 100V 2A SOT-223Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STripFET™ series STN2NE10 is a 100V N-Channel Power MOSFET in a SOT-223 package. This component offers a continuous drain current capability of 2A at 25°C (Tc) and a maximum power dissipation of 2.5W (Tc). The device features a low on-resistance of 400mOhm maximum at 1A, 10V, and a gate charge of 19 nC maximum at 10V. Input capacitance (Ciss) is rated at 305 pF maximum at 25V. The STN2NE10 is suitable for surface mount applications and operates within a temperature range of -55°C to 150°C (TJ). Key parameters include a Vgs(th) of 4V at 250µA and a maximum Vgs of ±20V. This MOSFET is utilized in various industrial applications including power management and signal switching.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 305 pF @ 25 V |
Request a Quote
Clients Also Buy
STD5N20LT4
MOSFET N-CH 200V 5A DPAK
STD30NF06LT4
MOSFET N-CH 60V 35A DPAK
STD140N6F7
MOSFET N-CH 60V 80A DPAK
