STN1NF10
MOSFET N-CH 100V 1A SOT-223Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STripFET™ II STN1NF10 is a 100V N-Channel MOSFET designed for surface mount applications. This component features a continuous drain current (Id) of 1A at 25°C (Tc) and a maximum power dissipation of 2.5W (Tc). The Rds On is specified at 800mOhm maximum when operating at 500mA drain current and 10V gate-source voltage. Key parameters include a Vgs(th) of 4V at 250µA and a gate charge (Qg) of 6nC at 10V. Input capacitance (Ciss) is 105pF maximum at 25V drain-source voltage. The device is housed in a TO-261-4, TO-261AA (SOT-223) package, supplied on tape and reel. Operating temperature range is -55°C to 150°C. This MOSFET is suitable for applications in power management and general-purpose switching across various industries.
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 105 pF @ 25 V |