STN1N20
MOSFET N-CH 200V 1A SOT223Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The STMicroelectronics STN1N20 is an N-Channel MOSFET from the MESH OVERLAY™ series. This component features a drain-source voltage (Vdss) of 200 V and a continuous drain current (Id) of 1A at 25°C. It offers a maximum on-resistance (Rds On) of 1.5 Ohm at 500mA, 10V, with a drive voltage specified at 10V. The device has a gate charge (Qg) of 15.7 nC at 10V and input capacitance (Ciss) of 206 pF at 25V. With a maximum power dissipation of 2.9W (Tc), it operates within a temperature range of -55°C to 150°C (TJ). The STN1N20 is packaged in a SOT-223 (TO-261-4, TO-261AA) surface mount configuration, supplied on tape and reel. This component is suitable for applications in power management, industrial automation, and consumer electronics.
Additional Information
Series: MESH OVERLAY™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.9W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 15.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 206 pF @ 25 V |
Request a Quote
Clients Also Buy
STB19NF20
MOSFET N-CH 200V 15A D2PAK
STB16NS25T4
MOSFET N-CH 250V 16A D2PAK
STD5N20T4
MOSFET N-CH 200V 5A DPAK
