STLD257N4F7AG
DISCRETEManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The STMicroelectronics STLD257N4F7AG is an N-Channel Power MOSFET from the STripFET™ F7 series, designed for demanding automotive applications and qualified to AEC-Q101 standards. This component features a 40V Drain-to-Source Voltage (Vdss) and a continuous drain current capability of 120A (Tc) at 25°C, with a maximum power dissipation of 158W (Tc). The device offers a low on-resistance (Rds On) of 1.1mOhm at 60A and 10V, facilitated by a gate drive voltage range of 6.5V to 10V. Key parameters include a gate charge (Qg) of 66.5 nC at 10V and input capacitance (Ciss) of 5400 pF at 25V. This device is housed in an 8-PowerWDFN package, specifically the PowerFlat™ (5x6) Dual Side footprint, suitable for surface mounting. It operates within an extended temperature range of -55°C to 175°C (TJ).
Additional Information
Series: Automotive, AEC-Q101, STripFET™ F7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.1mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 158W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerFlat™ (5x6) Dual Side |
| Drive Voltage (Max Rds On, Min Rds On) | 6.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 66.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5400 pF @ 25 V |
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