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STLD200N4F6AG

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STLD200N4F6AG

MOSFET N-CH 40V 120A POWERFLAT

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STripFET™ F6 series N-Channel MOSFET, part number STLD200N4F6AG, is a 40V device featuring a 1.5mOhm maximum Rds(on) at 75A and 10V Vgs. This surface mount component, packaged in an 8-PowerWDFN PowerFlat™ (5x6) Dual Side, offers a continuous drain current of 120A (Tc) and a maximum power dissipation of 158W (Tc). Key electrical characteristics include a gate charge of 172 nC at 10V and input capacitance of 10700 pF at 10V. Designed for automotive applications and qualified to AEC-Q101, this MOSFET operates across a temperature range of -55°C to 175°C (TJ). Its robust design makes it suitable for demanding automotive power management systems.

Additional Information

Series: STripFET™ F6RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerWDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Rds On (Max) @ Id, Vgs1.5mOhm @ 75A, 10V
FET Feature-
Power Dissipation (Max)158W (Tc)
Vgs(th) (Max) @ Id4V @ 1mA
Supplier Device PackagePowerFlat™ (5x6) Dual Side
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)6.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds10700 pF @ 10 V
QualificationAEC-Q101

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