STLD125N4F6AG
MOSFET N-CH 40V 120A POWERFLATManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STLD125N4F6AG is an N-Channel Power MOSFET from the STripFET™ F6 series. This device features a 40V drain-source breakdown voltage and a continuous drain current capability of 120A at 25°C (Tc). The STLD125N4F6AG offers a low on-resistance of 3mOhm maximum at 75A and 10V Vgs. It is packaged in an 8-PowerWDFN, specifically the PowerFlat™ (5x6) Dual Side configuration, suitable for surface mounting. Maximum power dissipation is rated at 130W (Tc). Key parameters include a gate charge (Qg) of 91nC at 10V and input capacitance (Ciss) of 5600pF at 10V. Operating temperature ranges from -55°C to 175°C (TJ). This component is commonly utilized in automotive and industrial power conversion applications.
Additional Information
Series: STripFET™ F6RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 130W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | PowerFlat™ (5x6) Dual Side |
| Drive Voltage (Max Rds On, Min Rds On) | 6.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 91 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5600 pF @ 10 V |
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