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STL9P4LF6AG

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STL9P4LF6AG

DISCRETE

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

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STMicroelectronics STL9P4LF6AG is a P-Channel MOSFET designed for high-efficiency power switching applications. This device features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) of 31A at 25°C. The on-resistance (Rds On) is a maximum of 26mOhm at 4A and 10V gate-source voltage (Vgs). With a maximum power dissipation of 50W at a case temperature, this MOSFET is suitable for demanding thermal environments. It offers a gate charge (Qg) of 48nC at 4.5V Vgs and input capacitance (Ciss) of 2540pF at 25V Vds. The STL9P4LF6AG is housed in an 8-PowerVDFN package, specifically the 3.3x3.3mm PowerFlat™ footprint, enabling efficient surface mounting. This component is qualified to AEC-Q101 standards, making it appropriate for automotive and industrial applications. The operating temperature range is -55°C to 150°C (TJ), with a maximum Vgs of ±18V and a threshold voltage (Vgs(th)) of 2.5V at 250µA.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C31A (Tc)
Rds On (Max) @ Id, Vgs26mOhm @ 4A, 10V
FET Feature-
Power Dissipation (Max)50W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackagePowerFlat™ (3.3x3.3)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±18V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2540 pF @ 25 V
QualificationAEC-Q101

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