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STL9P3LLH6

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STL9P3LLH6

MOSFET P-CH 30V 9A POWERFLAT

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The STMicroelectronics STL9P3LLH6 is a P-Channel MOSFET from the STripFET™ H6 series, designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 9A at 25°C (Tc). With a maximum Rds On of 15mOhm at 4.5A and 10V, it offers low conduction losses. The device is available in an 8-PowerVDFN package, specifically the 3.3x3.3 PowerFlat™ footprint, suitable for surface mounting. Key electrical parameters include a Gate Charge (Qg) of 24nC at 4.5V and an Input Capacitance (Ciss) of 2615pF at 25V. The operating temperature range is -55°C to 150°C. This MOSFET is commonly utilized in automotive, industrial, and consumer electronics sectors for power management and conversion tasks.

Additional Information

Series: STripFET™ H6RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Rds On (Max) @ Id, Vgs15mOhm @ 4.5A, 10V
FET Feature-
Power Dissipation (Max)3W (Ta)
Vgs(th) (Max) @ Id1V @ 250µA (Min)
Supplier Device PackagePowerFlat™ (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2615 pF @ 25 V

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