STL9P2UH7
MOSFET P-CH 20V 9A POWERFLATManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STripFET™ STL9P2UH7 is a P-Channel Power MOSFET designed for demanding applications. This component features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 9A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 22.5mOhm maximum at 4.5A and 4.5V gate-source voltage (Vgs). With a maximum power dissipation of 2.9W (Tc) and an operating junction temperature of 150°C, it is suitable for power management solutions. Key parameters include a gate charge (Qg) of 22 nC maximum at 4.5V Vgs and an input capacitance (Ciss) of 2390 pF maximum at 16V Vds. The STL9P2UH7 is housed in an 8-PowerVDFN package, identified as PowerFlat™ (3.3x3.3), and is supplied on tape and reel. This MOSFET finds application in automotive, industrial, and consumer electronics sectors.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 22.5mOhm @ 4.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.9W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerFlat™ (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2390 pF @ 16 V |
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