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STL9N3LLH5

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STL9N3LLH5

MOSFET N-CH 30V 9A POWERFLAT

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The STMicroelectronics STL9N3LLH5 is a high-performance N-Channel STripFET™ V Power MOSFET designed for demanding applications. This device features a 30V drain-source breakdown voltage and a continuous drain current rating of 9A at 25°C (Tc). With a low on-resistance of 19mOhm maximum at 4.5A and 10V Vgs, it minimizes conduction losses. The STL9N3LLH5 is housed in an 8-PowerVDFN, PowerFlat™ (3.3x3.3) surface mount package, offering excellent thermal performance with power dissipation capabilities of 2W (Ta) and 50W (Tc). Key electrical characteristics include a gate charge of 5 nC at 4.5V and an input capacitance of 724 pF at 25V. This MOSFET operates efficiently across a temperature range of -55°C to 150°C. The STL9N3LLH5 finds application in power management, automotive, and industrial sectors.

Additional Information

Series: STripFET™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Rds On (Max) @ Id, Vgs19mOhm @ 4.5A, 10V
FET Feature-
Power Dissipation (Max)2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackagePowerFlat™ (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±22V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds724 pF @ 25 V

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