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STL90N6F7

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STL90N6F7

MOSFET N-CH 60V 90A POWERFLAT

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The STMicroelectronics STripFET™ F7 series STL90N6F7 is a robust N-Channel Power MOSFET designed for high-current and high-efficiency applications. This device features a 60V drain-source breakdown voltage and a continuous drain current capability of 90A at 25°C (Tc). With a low on-resistance of 5.4mOhm maximum at 10.5A and 10V Vgs, it minimizes conduction losses. The STL90N6F7 offers a maximum power dissipation of 94W at 25°C (Tc) and operates within an extended temperature range up to 175°C (TJ). Key electrical characteristics include a gate charge of 25nC (Max) at 10V Vgs and an input capacitance (Ciss) of 1600pF (Max) at 25V Vds. The component utilizes a Metal Oxide technology and is housed in an 8-PowerVDFN package, identified by the PowerFlat™ (5x6) supplier device package. This MOSFET is suitable for demanding applications in automotive, industrial power, and power supply sectors. It is supplied in Tape & Reel packaging.

Additional Information

Series: STripFET™ F7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Rds On (Max) @ Id, Vgs5.4mOhm @ 10.5A, 10V
FET Feature-
Power Dissipation (Max)4.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackagePowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1600 pF @ 25 V

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