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STL90N10F7

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STL90N10F7

MOSFET N-CH 100V 70A POWERFLAT

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STL90N10F7 is an N-Channel MOSFET from the DeepGATE™ and STripFET™ VII series. This component features a 100V drain-source voltage and a continuous drain current of 70A at 25°C (Tc). The device offers a low on-resistance of 10.5mOhm maximum at 8A and 10V Vgs, with a gate charge of 39 nC maximum at 10V Vgs. Input capacitance (Ciss) is specified at 3550 pF maximum at 50V Vds. This surface mount device, packaged in an 8-PowerVDFN (PowerFlat™ 5x6), is rated for a maximum junction temperature of 175°C. Power dissipation is 5W (Ta) and 100W (Tc). The STL90N10F7 is utilized in applications such as automotive power systems and industrial power supplies.

Additional Information

Series: DeepGATE™, STripFET™ VIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Rds On (Max) @ Id, Vgs10.5mOhm @ 8A, 10V
FET Feature-
Power Dissipation (Max)5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackagePowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3550 pF @ 50 V

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