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STL8P4LLF6

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STL8P4LLF6

MOSFET P-CH 40V POWERFLAT

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The STMicroelectronics STL8P4LLF6 is a P-Channel Power MOSFET from the STripFET™ F6 series. This device features a Drain-Source Voltage (Vdss) of 40V and a continuous Drain Current (Id) of 8A (Tj) at 25°C, with a maximum power dissipation of 2.9W (Ta). It offers a low on-resistance (Rds On) of 20.5mOhm at 4A and 10V. The gate charge (Qg) is 22 nC at 4.5V, and input capacitance (Ciss) is 2850 pF at 25V. Designed for surface mounting, it is housed in an 8-PowerVDFN package, specifically the PowerFlat™ (3.3x3.3) format, supplied on tape and reel (TR). This component is suitable for applications in automotive and industrial power management systems.

Additional Information

Series: STripFET™ F6RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C8A (Tj)
Rds On (Max) @ Id, Vgs20.5mOhm @ 4A, 10V
FET Feature-
Power Dissipation (Max)2.9W (Ta)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackagePowerFlat™ (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2850 pF @ 25 V

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