STL8P2UH7
MOSFET P-CH 20V 8A POWERFLATManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STL8P2UH7 is a P-Channel Power MOSFET from the DeepGATE™, STripFET™ VII series. This device features a 20V drain-source voltage (Vdss) and supports a continuous drain current of 8A at 25°C (Tc). The STL8P2UH7 offers a low on-resistance (Rds On) of 22.5mOhm maximum at 4A, 4.5V, and is designed for efficient power management applications. It has a maximum power dissipation of 2.4W (Tc) and operates at junction temperatures up to 150°C. The MOSFET is housed in a compact 6-PowerWDFN (PowerFlat™ 2x2) package, suitable for surface mounting. Key parameters include a gate charge (Qg) of 22 nC maximum at 4.5V and input capacitance (Ciss) of 2390 pF maximum at 16V. This component is utilized in various industries including automotive and industrial automation.
Additional Information
Series: DeepGATE™, STripFET™ VIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 22.5mOhm @ 4A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerFlat™ (2x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2390 pF @ 16 V |
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