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STL8N6LF6AG

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STL8N6LF6AG

MOSFET N-CH 60V 32A POWERFLAT

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STripFET™ F6 series N-Channel Power MOSFET, part number STL8N6LF6AG. This 60V device features a continuous drain current of 32A at 25°C (Tc) and a low on-resistance of 27mOhm at 9.6A, 10V. The N-Channel MOSFET utilizes Metal Oxide technology with a maximum gate-source voltage of ±20V and a gate charge of 27nC at 10V. Designed for demanding applications, it offers a maximum power dissipation of 55W at 25°C (Tc). The STL8N6LF6AG is provided in a PowerFlat™ (5x6) package, specifically an 8-PowerVDFN, suitable for surface mounting and delivered on tape and reel. This component is AEC-Q101 qualified, making it suitable for automotive applications. Key parameters include an input capacitance of 1340pF at 25V and a threshold voltage of 2.5V at 250µA.

Additional Information

Series: STripFET™ F6RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C32A (Tc)
Rds On (Max) @ Id, Vgs27mOhm @ 9.6A, 10V
FET Feature-
Power Dissipation (Max)4.8W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackagePowerFlat™ (5x6)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1340 pF @ 25 V
QualificationAEC-Q101

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