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STL8N6LF3

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STL8N6LF3

MOSFET N-CH 60V 20A POWERFLAT

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The STMicroelectronics STL8N6LF3 is an N-channel STripFET™ F3 Power MOSFET designed for high-efficiency power management applications. This component features a 60V drain-source breakdown voltage and a continuous drain current capability of 20A at 25°C (Tc), with a maximum power dissipation of 65W (Tc). The low on-resistance of 30 mOhm at 4A and 10V (Vgs) is achieved through advanced trench technology. With a gate charge (Qg) of 13 nC at 10V, it offers fast switching characteristics. The STL8N6LF3 is supplied in an 8-PowerVDFN (PowerFlat™ 5x6) surface-mount package and is qualified to AEC-Q101 standards, making it suitable for automotive and industrial applications. It operates across a wide temperature range of -55°C to 175°C (TJ).

Additional Information

Series: STripFET™ F3RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Rds On (Max) @ Id, Vgs30mOhm @ 4A, 10V
FET Feature-
Power Dissipation (Max)65W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackagePowerFlat™ (5x6)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds668 pF @ 25 V
QualificationAEC-Q101

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