STL8N65M2
MOSFET N-CH 650V 5A PWRFLAT56 HVManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics MDmesh™ M2 series STL8N65M2 is a 650V N-Channel Power MOSFET designed for high-voltage applications. This device features a low on-resistance of 1.25 Ohm at 2A, 10V Vgs, and a continuous drain current of 4A (Tc) at 25°C. The package is an 8-PowerVDFN, also known as PowerFlat™ (5x6) HV, suitable for surface mounting. Key parameters include a gate charge of 9 nC at 10V and input capacitance of 270 pF at 100V. With a maximum power dissipation of 48W (Tc), this MOSFET is utilized in power factor correction (PFC), switch mode power supplies (SMPS), and lighting applications.
Additional Information
Series: MDmesh™ M2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.25Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 48W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerFlat™ (5x6) HV |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 100 V |
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