STL85N6F3
MOSFET N-CH 60V 85A POWERFLATManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STL85N6F3 is an N-Channel STripFET™ MOSFET designed for high-power applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous drain current (Id) capability of 85A at 25°C (Tc). The Rds On is specified at a maximum of 5.7mOhm at 8.5A and 10V gate drive. With a maximum power dissipation of 80W (Tc), it is suitable for demanding thermal environments. The device is housed in a PowerFlat™ (5x6) package, specifically an 8-PowerVDFN, for efficient surface mounting. Key parameters include a gate charge (Qg) of 60 nC at 10V and input capacitance (Ciss) of 3400 pF at 25V. Operating temperature range is -55°C to 150°C (TJ). This MOSFET is utilized in industries such as automotive and industrial power management.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 85A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 8.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 80W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PowerFlat™ (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3400 pF @ 25 V |
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