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STL80N75F6

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STL80N75F6

MOSFET N-CH 75V 80A POWERFLAT

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STL80N75F6 is a 75V N-Channel Power MOSFET from the DeepGATE™, STripFET™ VI series. This component is designed for high-efficiency power switching applications. It features a low on-resistance of 6.3mOhm maximum at 9A and 10V Vgs, with a continuous drain current capability of 80A (Tc) at 25°C. The device offers a low gate charge of 100 nC maximum at 10V, contributing to reduced switching losses. With a drain-source voltage (Vdss) of 75V and a maximum power dissipation of 80W (Tc), it is suitable for demanding applications. The STL80N75F6 utilizes the PowerFlat™ (5x6) package, a surface mountable 8-PowerVDFN configuration, supplied on tape and reel for automated assembly. This MOSFET technology is prevalent in automotive, industrial motor control, and power supply sectors.

Additional Information

Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Rds On (Max) @ Id, Vgs6.3mOhm @ 9A, 10V
FET Feature-
Power Dissipation (Max)80W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackagePowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)75 V
Gate Charge (Qg) (Max) @ Vgs100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7120 pF @ 25 V

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