STL80N3LLH6
MOSFET N-CH 30V 80A POWERFLATManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STL80N3LLH6 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 80A at 25°C (Tc). The STripFET™ VI series technology, incorporating DeepGATE™ advancements, delivers a low on-resistance of just 5.2mOhm at 10.5A and 10V Vgs, ensuring minimized conduction losses.
Operating with a gate drive voltage range of 4.5V to 10V, the STL80N3LLH6 exhibits a typical gate charge of 17nC at 4.5V, facilitating fast switching speeds. Input capacitance (Ciss) is rated at a maximum of 1690pF at 25V. The component is housed in an 8-PowerVDFN, PowerFlat™ (5x6) package, suitable for surface mounting and capable of dissipating up to 60W (Tc). Its robust construction is designed for operation across a wide temperature range from -55°C to 150°C (TJ). This MOSFET is commonly utilized in power supply units, automotive electronics, and industrial motor control systems.
Additional Information
Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.2mOhm @ 10.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerFlat™ (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1690 pF @ 25 V |
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