STL7NM60N
MOSFET N-CH 600V 5.8A 14PWRFLATManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STL7NM60N is an N-Channel Power MOSFET from the MDmesh™ II series. This device offers a 600V breakdown voltage and a continuous drain current capability of 5.8A (Tc). Designed for efficient power conversion, it features a low on-resistance (Rds On) of 900mOhm maximum at 2.5A and 10V Vgs. The STL7NM60N is packaged in a compact 14-PowerFLAT™ (5x5) surface mount configuration, suitable for high-density applications. Key parameters include a gate charge (Qg) of 14nC at 10V and input capacitance (Ciss) of 363pF at 50V. With a maximum power dissipation of 68W (Tc), this MOSFET is utilized in various power supply architectures, industrial automation, and lighting control systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 14-PowerVQFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 68W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 14-PowerFLAT™ (5x5) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 363 pF @ 50 V |
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