STL7N6F7
MOSFET N-CH 60V 7A POWERFLATManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STL7N6F7 is an N-Channel STripFET™ Power MOSFET designed for high-efficiency switching applications. This device features a 60V drain-source breakdown voltage and a continuous drain current capability of 7A at 25°C (Tc). Its low on-resistance of 25mOhm (max) at 3.5A and 10V gate drive voltage minimizes conduction losses. The STL7N6F7 is housed in a compact 6-PowerWDFN (PowerFlat™ 2x2) surface-mount package, suitable for demanding thermal performance with a maximum power dissipation of 2.4W (Ta). Key electrical parameters include input capacitance (Ciss) of 450pF (max) at 25V and gate charge (Qg) of 8nC at 10V. This MOSFET is engineered for use in automotive, industrial power, and consumer electronics sectors. The operating temperature range is from -55°C to 150°C (TJ).
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerFlat™ (2x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 450 pF @ 25 V |
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