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STL75N8LF6

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STL75N8LF6

MOSFET N-CH 80V 75A POWERFLAT

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The STMicroelectronics STL75N8LF6 is an N-Channel Power MOSFET, part of the DeepGATE™, STripFET™ VI series. This component features a Drain-Source Voltage (Vdss) of 80V and a continuous drain current (Id) of 75A at 25°C, with a maximum power dissipation of 80W. The device exhibits a low on-resistance (Rds On) of 7.4mOhm at 9A and 10V, facilitated by its 5V to 10V drive voltage range. Key electrical characteristics include a maximum gate charge (Qg) of 125 nC at 4.5V and an input capacitance (Ciss) of 6895 pF at 25V. Designed for surface mounting, it is supplied in an 8-PowerVDFN package, referred to as PowerFlat™ (5x6) by the manufacturer, on tape and reel. This component is suitable for applications in automotive and industrial power management systems.

Additional Information

Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Rds On (Max) @ Id, Vgs7.4mOhm @ 9A, 10V
FET Feature-
Power Dissipation (Max)80W (Tc)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device PackagePowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Vgs (Max)+21V, -16V
Drain to Source Voltage (Vdss)80 V
Gate Charge (Qg) (Max) @ Vgs125 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds6895 pF @ 25 V

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