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STL6N3LLH6

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STL6N3LLH6

MOSFET N-CH 30V POWERFLAT

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STL6N3LLH6 is an N-Channel Power MOSFET from the DeepGATE™, STripFET™ VI series. This component features a 30V drain-source voltage (Vdss) and a continuous drain current of 13A (Tc) at 25°C. The device offers a low on-resistance of 25mOhm at 3A and 10V (Vgs). With a maximum power dissipation of 2.4W (Tc), it is designed for efficient power management. The STL6N3LLH6 is housed in a compact PowerFlat™ (2x2) package, suitable for surface mounting, and is supplied on tape and reel. Its typical applications include power switching, DC-DC converters, and motor control in automotive and industrial sectors. The gate threshold voltage is 1V (Min) at 250µA, with a maximum gate-source voltage of ±20V.

Additional Information

Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-PowerWDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C13A (Tc)
Rds On (Max) @ Id, Vgs25mOhm @ 3A, 10V
FET Feature-
Power Dissipation (Max)2.4W (Tc)
Vgs(th) (Max) @ Id1V @ 250µA (Min)
Supplier Device PackagePowerFlat™ (2x2)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds283 pF @ 24 V

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