STL6N2VH5
MOSFET N-CH 20V POWERFLATManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STL6N2VH5 is an N-Channel Power MOSFET from the STripFET™ V series. This device features a 20V drain-source breakdown voltage and a continuous drain current capability of 6A at 25°C (Tj). The Rds(on) is specified at a maximum of 30mOhm at 3A and 4.5V Vgs. Optimized for efficient switching, it offers a low gate charge of 6 nC at 4.5V Vgs and a Ciss of 550 pF at 16V Vds. The STL6N2VH5 is housed in a compact 6-PowerWDFN package, utilizing STMicroelectronics' PowerFlat™ (2x2) technology for enhanced thermal performance, with a maximum power dissipation of 2.4W (Tc). This component is suitable for applications in automotive and industrial power management. It operates across a temperature range of -55°C to 150°C (TJ) and supports gate drive voltages between 2.5V and 4.5V, with a maximum Vgs of ±8V.
Additional Information
Series: STripFET™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tj) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Tc) |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
| Supplier Device Package | PowerFlat™ (2x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 16 V |
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