STL65N3LLH5
MOSFET N-CH 30V 65A POWERFLATManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STL65N3LLH5 is an N-Channel STripFET™ V series Power MOSFET designed for efficient power switching applications. This device features a 30V drain-source breakdown voltage (Vds) and a continuous drain current (Id) capability of 65A at 25°C (Tc). The Rds(on) is specified at a maximum of 5.8mOhm at 9.5A and 10V Vgs. Key parameters include a gate charge (Qg) of 12nC at 4.5V Vgs and an input capacitance (Ciss) of 1500pF at 25V Vds. The MOSFET supports a wide gate-source voltage (Vgs) range from 4.5V to 10V for optimal switching, with a maximum Vgs of ±22V. Its thermal capabilities include a maximum power dissipation of 60W (Tc) and an operating temperature range of -55°C to 150°C (TJ). The STL65N3LLH5 is packaged in a surface-mount 8-PowerVDFN (PowerFlat™ 5x6) format, supplied on tape and reel. This component is frequently utilized in automotive and industrial power management systems.
Additional Information
Series: STripFET™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 9.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerFlat™ (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±22V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 25 V |
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