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STL62P3LLH6

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STL62P3LLH6

MOSFET P-CH 30V 62A POWERFLAT

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STL62P3LLH6 is a P-Channel STripFET™ H6 Power MOSFET designed for demanding power management applications. This device features a 30V Drain-Source Voltage (Vdss) and a continuous Drain Current (Id) of 62A at 25°C (Tc). With a maximum power dissipation of 100W (Tc), it is suitable for high-current switching. The low on-resistance of 10.5mOhm at 7A and 10V (Vgs) minimizes conduction losses. Key parameters include a Gate Charge (Qg) of 33nC at 4.5V (Vgs) and an input capacitance (Ciss) of 3350pF at 25V (Vds). The STL62P3LLH6 is housed in an 8-PowerVDFN package, also known as PowerFlat™ (5x6), facilitating efficient thermal management through surface mounting. It operates across a temperature range of 175°C (TJ). This component finds application in automotive, industrial, and power supply sectors.

Additional Information

Series: STripFET™ H6RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C62A (Tc)
Rds On (Max) @ Id, Vgs10.5mOhm @ 7A, 10V
FET Feature-
Power Dissipation (Max)100W (Tc)
Vgs(th) (Max) @ Id1V @ 250µA (Min)
Supplier Device PackagePowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds3350 pF @ 25 V

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