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STL60N3LLH5

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STL60N3LLH5

MOSFET N-CH 30V 60A POWERFLAT

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STL60N3LLH5 is an N-Channel Power MOSFET from the STripFET™ V series. This device features a 30 V drain-source breakdown voltage and a continuous drain current capability of 60 A at 25°C, with a maximum power dissipation of 60 W. The low on-resistance is specified at 7.1 mOhm maximum at 8.5 A, 10 V. Gate drive specifications include a threshold voltage of 1 V at 250 µA and a maximum gate-source voltage of ±22 V. Key parameters include a gate charge (Qg) of 8 nC at 4.5 V and input capacitance (Ciss) of 1290 pF at 25 V. The STL60N3LLH5 is housed in an 8-PowerVDFN (PowerFlat™ 5x6) package, suitable for surface mounting. This component is utilized in applications such as automotive, industrial power control, and power management systems. It is supplied in Tape & Reel packaging.

Additional Information

Series: STripFET™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Rds On (Max) @ Id, Vgs7.1mOhm @ 8.5A, 10V
FET Feature-
Power Dissipation (Max)60W (Tc)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device PackagePowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±22V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1290 pF @ 25 V

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