STL60N10F7
MOSFET N-CH 100V 46A POWERFLATManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The STMicroelectronics STL60N10F7 is an N-channel Power MOSFET from the DeepGATE™, STripFET™ VII series. This device features a Drain-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 46A at 25°C (Tc). With a low on-resistance (Rds On) of 18mOhm maximum at 6A and 10V, it is engineered for efficient power management. The STL60N10F7 offers a maximum gate-source voltage (Vgs) of 20V and a gate threshold voltage (Vgs(th)) of 4.5V maximum at 250µA. Key parameters include input capacitance (Ciss) of 1640pF maximum at 50V and gate charge (Qg) of 25nC maximum at 10V. This component supports a power dissipation of up to 72W at 25°C (Tc). The STL60N10F7 is housed in an 8-PowerVDFN package, also known as PowerFlat™ (5x6), and is supplied on tape and reel. It is suitable for applications in automotive and industrial power systems.
Additional Information
Series: DeepGATE™, STripFET™ VIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 46A (Tc) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Ta), 72W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | PowerFlat™ (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | 20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1640 pF @ 50 V |
Request a Quote
Clients Also Buy
STD100N10F7
MOSFET N CH 100V 80A DPAK
STD25N10F7
MOSFET N-CH 100V 25A DPAK
STL7N10F7
MOSFET N-CH 100V POWERFLAT
