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STL58N3LLH5

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STL58N3LLH5

MOSFET N-CH 30V 64A POWERFLAT

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STL58N3LLH5 is an N-channel STripFET™ H5 series power MOSFET designed for demanding applications. This AEC-Q101 qualified component features a 30 V drain-source voltage and a continuous drain current of 64 A at 25°C (Tc). The low on-resistance of 9 mOhm at 7.5 A and 10 V gate-source voltage, alongside optimized gate charge of 10 nC at 4.5 V, ensures high efficiency. With a maximum power dissipation of 62.5 W at 25°C (Tc), it offers robust thermal performance. The device is housed in an 8-PowerVDFN package, also known as PowerFlat™ (5x6), for efficient surface mounting. Applications include automotive power management and motor control systems.

Additional Information

Series: STripFET™ H5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C64A (Tc)
Rds On (Max) @ Id, Vgs9mOhm @ 7.5A, 10V
FET Feature-
Power Dissipation (Max)4.8W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackagePowerFlat™ (5x6)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)+22V, -20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds950 pF @ 25 V
QualificationAEC-Q101

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