STL56N3LLH5
MOSFET N-CH 30V 56A POWERFLATManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STL56N3LLH5 is an N-Channel Power MOSFET from the STripFET™ V series. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 56A at 25°C (Tc). With a maximum power dissipation of 62.5W (Tc), it is engineered for demanding applications requiring efficient power handling. The low on-resistance of 9mOhm at 7.5A and 10V (Vgs) minimizes conduction losses. Gate drive requirements are met with a threshold voltage (Vgs(th)) of 1V at 250µA and a maximum gate-source voltage of +22V/-20V, with optimal performance at 4.5V. Key capacitance values include input capacitance (Ciss) of 950pF at 25V and gate charge (Qg) of 6.5nC at 4.5V. The STL56N3LLH5 is supplied in an 8-PowerVDFN (PowerFlat™ 5x6) surface mount package, suitable for high-density designs. This component is commonly utilized in automotive, industrial, and consumer electronics power management systems. It operates within a temperature range of -55°C to 150°C (TJ) and is provided in tape and reel packaging.
Additional Information
Series: STripFET™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerFlat™ (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +22V, -20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 25 V |
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